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Manijeh Razeghi

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Iranian-American Physicist

United StatesScientistsBorn 1953 · age 73
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Manijeh Razeghi is an Iranian-American scientist in the fields of semiconductors and optoelectronic devices. She influenced modern epitaxial techniques for semiconductors such as low pressure metalorganic chemical vapor deposition (MOCVD), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), GasMBE, and MOMBE.

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Awards 2

2018Benjamin Franklin Medal
1995Society of Women Engineers Achievement Award

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About this person

Manijeh Razeghi is an Iranian-American scientist in the fields of semiconductors and optoelectronic devices. She influenced modern epitaxial techniques for semiconductors such as low pressure metalorganic chemical vapor deposition (MOCVD), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), GasMBE, and MOMBE. These techniques have enabled the development of semiconductor devices and quantum structures with higher composition consistency and reliability, leading to major advancement in InP and GaAs based quantum photonics and electronic devices, which were at the core of the late 20th century optical fiber telecommunications and early information technology.

Country
United States
Category
Scientists
Type
Scientist
Status
living
Dates
Born 1953 · age 73
Written about in
6 languages

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